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| SMD Type Silicon N-Channel MOSFET 2SK1254S Features Low on-resistance High speed switching Suitable for switching regulator and DC-DC converter +0.2 9.70-0.2 +0.15 5.55-0.15 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET TO-252 Unit: mm +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 120 20 3 12 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=10mA,VGS=0 ID= 100 A,VDS=0 Min 120 20 100 10 1.0 2.4 4.0 0.30 0.35 420 VDS=10V,VGS=0,f=1MHZ 190 25 5 ID=2A,VGS(on)=10V,RL=15 20 150 45 0.40 0.55 pF pF pF ns ns ns ns 2.0 Typ Max Unit V V A A V s VDS=100V,VGS=0 VGS= 16V,VDS=0 VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=10V,ID=2A VGS=10V,ID=2A VGS=4V,ID=2A 3.80 www.kexin.com.cn 1 |
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